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AIMBG120R080M1XTMA1

Infineon Technologies

Producto No:

AIMBG120R080M1XTMA1

Paquete:

PG-TO263-7-12

Lote:

-

Ficha de datos:

-

Descripción:

SIC_DISCRETE

Cantidad:

Entrega:

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Pago:

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Información del producto

Parámetro Info

Guía del usuario

Operating Temperature -55°C ~ 175°C
FET Feature -
FET Type N-Channel
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs -
Supplier Device Package PG-TO263-7-12
Vgs(th) (Max) @ Id -
Drain to Source Voltage (Vdss) 1200 V
Series CoolSiC™
Power Dissipation (Max) -
Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Technology SiCFET (Silicon Carbide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 30A
Vgs (Max) -
Drive Voltage (Max Rds On, Min Rds On) -
Package Tape & Reel (TR)
Base Product Number AIMBG120