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BSC0302LSATMA1

Infineon Technologies

Producto No:

BSC0302LSATMA1

Paquete:

PG-TDSON-8-7

Lote:

-

Ficha de datos:

-

Descripción:

MOSFET N-CH 120V 12A/99A TDSON

Cantidad:

Entrega:

1.webp 4.webp 5.webp 2.webp 3.webp

Pago:

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En stock : 848

Mínimo: 1 Múltiplos: 1

Qty

Precio unitario

Precio Ext

  • 1

    $2.185

    $2.185

  • 10

    $1.8107

    $18.107

  • 100

    $1.441245

    $144.1245

  • 500

    $1.219515

    $609.7575

  • 1000

    $1.03474

    $1034.74

  • 2000

    $0.983012

    $1966.024

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Información del producto

Parámetro Info

Guía del usuario

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 7400 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs 79 nC @ 10 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 8mOhm @ 50A, 10V
Supplier Device Package PG-TDSON-8-7
Vgs(th) (Max) @ Id 2.4V @ 112µA
Drain to Source Voltage (Vdss) 120 V
Series OptiMOS™ 2
Power Dissipation (Max) 156W (Tc)
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 12A (Ta), 99A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number BSC0302