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FQD5P20TM

Fairchild Semiconductor

Producto No:

FQD5P20TM

Paquete:

TO-252, (D-Pak)

Lote:

-

Ficha de datos:

-

Descripción:

POWER FIELD-EFFECT TRANSISTOR, 3

Cantidad:

Entrega:

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Pago:

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Información del producto

Parámetro Info

Guía del usuario

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 430 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 1.4Ohm @ 1.85A, 10V
Supplier Device Package TO-252, (D-Pak)
Vgs(th) (Max) @ Id 5V @ 250µA
Drain to Source Voltage (Vdss) 200 V
Series QFET®
Power Dissipation (Max) 2.5W (Ta), 45W (Tc)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Mfr Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C 3.7A (Tc)
Vgs (Max) ±30V
Package Bulk