FQN1N60CTA

Fairchild Semiconductor

Producto No:

FQN1N60CTA

Fabricante:

Paquete:

TO-92-3

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Descripción:

SMALL SIGNAL FIELD-EFFECT TRANSI

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En stock : 84002

Mínimo: 1 Múltiplos: 1

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	6.2 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	11.5Ohm @ 150mA, 10V
Supplier Device Package	TO-92-3
Vgs(th) (Max) @ Id	4V @ 250µA
Drain to Source Voltage (Vdss)	600 V
Series	QFET®
Power Dissipation (Max)	1W (Ta), 3W (Tc)
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Technology	MOSFET (Metal Oxide)
Mfr	Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C	300mA (Tc)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk