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FQNL2N50BTA

Fairchild Semiconductor

Producto No:

FQNL2N50BTA

Paquete:

TO-92-3

Lote:

-

Ficha de datos:

-

Descripción:

POWER FIELD-EFFECT TRANSISTOR, 0

Cantidad:

Entrega:

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Pago:

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Información del producto

Parámetro Info

Guía del usuario

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 230 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 8 nC @ 10 V
Mounting Type Through Hole
Product Status Active
Rds On (Max) @ Id, Vgs 5.3Ohm @ 175mA, 10V
Supplier Device Package TO-92-3
Vgs(th) (Max) @ Id 3.7V @ 250µA
Drain to Source Voltage (Vdss) 500 V
Series QFET®
Power Dissipation (Max) 1.5W (Tc)
Package / Case TO-226-3, TO-92-3 Long Body (Formed Leads)
Technology MOSFET (Metal Oxide)
Mfr Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C 350mA (Tc)
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Bulk
Base Product Number FQNL2