FQPF9N25CYDTU

Fairchild Semiconductor

Producto No:

FQPF9N25CYDTU

Fabricante:

Paquete:

TO-220F-3 (Y-Forming)

Lote:

Ficha de datos:

Descripción:

MOSFET N-CH 250V 8.8A TO220F-3

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En stock : 1795

Mínimo: 1 Múltiplos: 1

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	710 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	35 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	430mOhm @ 4.4A, 10V
Supplier Device Package	TO-220F-3 (Y-Forming)
Vgs(th) (Max) @ Id	4V @ 250µA
Drain to Source Voltage (Vdss)	250 V
Series	QFET®
Power Dissipation (Max)	38W (Tc)
Package / Case	TO-220-3 Full Pack, Formed Leads
Technology	MOSFET (Metal Oxide)
Mfr	Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C	8.8A (Tc)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk