Fairchild Semiconductor
Producto No:
HGTP12N60A4D
Fabricante:
Paquete:
TO-220-3
Lote:
-
Ficha de datos:
-
Descripción:
INSULATED GATE BIPOLAR TRANSISTO
Cantidad:
Entrega:

Pago:
Mínimo: 1 Múltiplos: 1
Qty
Precio unitario
Precio Ext
165
$1.729
$285.285
¿No es el precio que quieres? Envíe RFQ ahora y nos pondremos en contacto con usted lo antes posible.

| Operating Temperature | -55°C ~ 150°C (TJ) |
| Test Condition | 390V, 12A, 10Ohm, 15V |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 30 ns |
| Switching Energy | 55µJ (on), 50µJ (off) |
| Current - Collector (Ic) (Max) | 54 A |
| Mounting Type | Through Hole |
| Product Status | Active |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Td (on/off) @ 25°C | 17ns/96ns |
| Supplier Device Package | TO-220-3 |
| Current - Collector Pulsed (Icm) | 96 A |
| Series | - |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 12A |
| Package / Case | TO-220-3 |
| Gate Charge | 78 nC |
| Power - Max | 167 W |
| Mfr | Fairchild Semiconductor |
| Package | Bulk |
| IGBT Type | - |