HGTP12N60C3D

Fairchild Semiconductor

Producto No:

HGTP12N60C3D

Fabricante:

Paquete:

TO-220-3

Lote:

Ficha de datos:

Descripción:

INSULATED GATE BIPOLAR TRANSISTO

Cantidad:

Entrega:

Pago:

En stock : Por favor investigación

Por favor envíe RFQ, responderemos inmediatamente.

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Operating Temperature	-40°C ~ 150°C (TJ)
Test Condition	-
Input Type	Standard
Reverse Recovery Time (trr)	40 ns
Switching Energy	380µJ (on), 900µJ (off)
Current - Collector (Ic) (Max)	24 A
Mounting Type	Through Hole
Product Status	Active
Voltage - Collector Emitter Breakdown (Max)	600 V
Td (on/off) @ 25°C	-
Supplier Device Package	TO-220-3
Current - Collector Pulsed (Icm)	96 A
Series	-
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 15A
Package / Case	TO-220-3
Gate Charge	48 nC
Power - Max	104 W
Mfr	Fairchild Semiconductor
Package	Bulk
IGBT Type	-