Hogar / Diode Arrays / HN2S02FU(TE85L,F)
minImg

HN2S02FU(TE85L,F)

Toshiba Semiconductor and Storage

Producto No:

HN2S02FU(TE85L,F)

Paquete:

US6

Lote:

-

Ficha de datos:

-

Descripción:

SMALL-SIGNAL SCHOTTKY BARRIER DI

Cantidad:

Entrega:

1.webp 4.webp 5.webp 2.webp 3.webp

Pago:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

En stock : 35

Mínimo: 1 Múltiplos: 1

Qty

Precio unitario

Precio Ext

  • 1

    $0.456

    $0.456

  • 10

    $0.3173

    $3.173

  • 100

    $0.160455

    $16.0455

  • 500

    $0.130872

    $65.436

  • 1000

    $0.0971

    $97.1

¿No es el precio que quieres? Envíe RFQ ahora y nos pondremos en contacto con usted lo antes posible.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

Información del producto

Parámetro Info

Guía del usuario

Speed Small Signal =< 200mA (Io), Any Speed
Mounting Type Surface Mount
Product Status Active
Supplier Device Package US6
Current - Reverse Leakage @ Vr 5 µA @ 40 V
Series -
Package / Case 6-TSSOP, SC-88, SOT-363
Technology Schottky
Diode Configuration 3 Independent
Voltage - Forward (Vf) (Max) @ If 600 mV @ 100 mA
Mfr Toshiba Semiconductor and Storage
Voltage - DC Reverse (Vr) (Max) 40 V
Package Tape & Reel (TR)
Current - Average Rectified (Io) (per Diode) 100mA
Operating Temperature - Junction 125°C (Max)
Base Product Number HN2S02