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IDH03G65C5XKSA2

Infineon Technologies

Producto No:

IDH03G65C5XKSA2

Paquete:

PG-TO220-2-1

Lote:

-

Ficha de datos:

-

Descripción:

DIODE SIL CARB 650V 3A TO220-2-1

Cantidad:

Entrega:

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Pago:

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En stock : 460

Mínimo: 1 Múltiplos: 1

Qty

Precio unitario

Precio Ext

  • 1

    $1.7575

    $1.7575

  • 10

    $1.4611

    $14.611

  • 100

    $1.16318

    $116.318

  • 500

    $0.984257

    $492.1285

  • 1000

    $0.835126

    $835.126

  • 2000

    $0.793374

    $1586.748

  • 5000

    $0.763544

    $3817.72

  • 10000

    $0.738274

    $7382.74

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Información del producto

Parámetro Info

Guía del usuario

Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Capacitance @ Vr, F 100pF @ 1V, 1MHz
Mounting Type Through Hole
Product Status Not For New Designs
Supplier Device Package PG-TO220-2-1
Current - Reverse Leakage @ Vr 50 µA @ 650 V
Series CoolSiC™+
Package / Case TO-220-2
Technology SiC (Silicon Carbide) Schottky
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 3 A
Mfr Infineon Technologies
Voltage - DC Reverse (Vr) (Max) 650 V
Package Tube
Operating Temperature - Junction -55°C ~ 175°C
Current - Average Rectified (Io) 3A
Base Product Number IDH03G65