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IDW12G65C5

Infineon Technologies

Producto No:

IDW12G65C5

Paquete:

PG-TO247-3-41

Lote:

-

Ficha de datos:

-

Descripción:

DIODE SIL CARB 650V 12A TO247-3

Cantidad:

Entrega:

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Pago:

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Información del producto

Parámetro Info

Guía del usuario

Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Capacitance @ Vr, F 360pF @ 1V, 1MHz
Mounting Type Through Hole
Product Status Active
Supplier Device Package PG-TO247-3-41
Current - Reverse Leakage @ Vr 500 µA @ 650 V
Series CoolSiC™+
Package / Case TO-247-3
Technology SiC (Silicon Carbide) Schottky
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 12 A
Mfr Infineon Technologies
Voltage - DC Reverse (Vr) (Max) 650 V
Package Bulk
Operating Temperature - Junction -55°C ~ 175°C
Current - Average Rectified (Io) 12A