Infineon Technologies
Producto No:
IDW12G65C5
Fabricante:
Paquete:
PG-TO247-3-41
Lote:
-
Ficha de datos:
-
Descripción:
DIODE SIL CARB 650V 12A TO247-3
Cantidad:
Entrega:

Pago:
Por favor envíe RFQ, responderemos inmediatamente.

| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Capacitance @ Vr, F | 360pF @ 1V, 1MHz |
| Mounting Type | Through Hole |
| Product Status | Active |
| Supplier Device Package | PG-TO247-3-41 |
| Current - Reverse Leakage @ Vr | 500 µA @ 650 V |
| Series | CoolSiC™+ |
| Package / Case | TO-247-3 |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 12 A |
| Mfr | Infineon Technologies |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Package | Bulk |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Current - Average Rectified (Io) | 12A |