Infineon Technologies
Producto No:
IDW24G65C5BXKSA2
Fabricante:
Paquete:
PG-TO247-3
Lote:
-
Ficha de datos:
-
Descripción:
DIODE SIL CARB 650V 12A TO247-3
Cantidad:
Entrega:

Pago:
Mínimo: 1 Múltiplos: 1
Qty
Precio unitario
Precio Ext
1
$11.305
$11.305
10
$9.69095
$96.9095
100
$8.075665
$807.5665
500
$7.125589
$3562.7945
1000
$6.413022
$6413.022
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| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Capacitance @ Vr, F | 360pF @ 1V, 1MHz |
| Mounting Type | Through Hole |
| Product Status | Active |
| Supplier Device Package | PG-TO247-3 |
| Current - Reverse Leakage @ Vr | 190 µA @ 650 V |
| Series | CoolSiC™+ |
| Package / Case | TO-247-3 |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 12 A |
| Mfr | Infineon Technologies |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Package | Tube |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Current - Average Rectified (Io) | 12A |
| Base Product Number | IDW24G65 |