IMZ120R045M1XKSA1

Infineon Technologies

Producto No:

IMZ120R045M1XKSA1

Fabricante:

Paquete:

PG-TO247-4-1

Lote:

Ficha de datos:

Descripción:

SICFET N-CH 1200V 52A TO247-4

Cantidad:

Entrega:

Pago:

En stock : 109

Mínimo: 1 Múltiplos: 1

Qty

Precio unitario

Precio Ext

¿No es el precio que quieres? Envíe RFQ ahora y nos pondremos en contacto con usted lo antes posible.

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	Current Sensing
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1900 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs	52 nC @ 15 V
Mounting Type	Through Hole
Product Status	Not For New Designs
Rds On (Max) @ Id, Vgs	59mOhm @ 20A, 15V
Supplier Device Package	PG-TO247-4-1
Vgs(th) (Max) @ Id	5.7V @ 10mA
Drain to Source Voltage (Vdss)	1200 V
Series	CoolSiC™
Power Dissipation (Max)	228W (Tc)
Package / Case	TO-247-4
Technology	SiCFET (Silicon Carbide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	52A (Tc)
Vgs (Max)	+20V, -10V
Drive Voltage (Max Rds On, Min Rds On)	15V
Package	Tray
Base Product Number	IMZ120