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IPA80R650CEXKSA1

Infineon Technologies

Producto No:

IPA80R650CEXKSA1

Paquete:

PG-TO220-FP

Lote:

-

Ficha de datos:

-

Descripción:

MOSFET N-CH 800V 4.5A TO220

Cantidad:

Entrega:

1.webp 4.webp 5.webp 2.webp 3.webp

Pago:

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Información del producto

Parámetro Info

Guía del usuario

Operating Temperature -40°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1100 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V
Mounting Type Through Hole
Product Status Discontinued at Digi-Key
Rds On (Max) @ Id, Vgs 650mOhm @ 5.1A, 10V
Supplier Device Package PG-TO220-FP
Vgs(th) (Max) @ Id 3.9V @ 470µA
Drain to Source Voltage (Vdss) 800 V
Series CoolMOS™ CE
Power Dissipation (Max) 33W (Tc)
Package / Case TO-220-3 Full Pack
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 4.5A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IPA80R