IPD50P04P4L11ATMA1

Infineon Technologies

Producto No:

IPD50P04P4L11ATMA1

Fabricante:

Paquete:

PG-TO252-3-313

Lote:

Ficha de datos:

Descripción:

MOSFET P-CH 40V 50A TO252-3

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En stock : 1248

Mínimo: 1 Múltiplos: 1

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	3900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	59 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Not For New Designs
Rds On (Max) @ Id, Vgs	10.6mOhm @ 50A, 10V
Supplier Device Package	PG-TO252-3-313
Vgs(th) (Max) @ Id	2.2V @ 85µA
Drain to Source Voltage (Vdss)	40 V
Series	Automotive, OptiMOS™-P2
Power Dissipation (Max)	58W (Tc)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Vgs (Max)	±16V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	IPD50