IPDQ60R010S7XTMA1

Infineon Technologies

Producto No:

IPDQ60R010S7XTMA1

Fabricante:

Paquete:

PG-HDSOP-22-1

Lote:

Ficha de datos:

Descripción:

HIGH POWER_NEW PG-HDSOP-22

Cantidad:

Entrega:

Pago:

En stock : 115

Mínimo: 1 Múltiplos: 1

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	11987 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs	318 nC @ 12 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	10mOhm @ 50A, 12V
Supplier Device Package	PG-HDSOP-22-1
Vgs(th) (Max) @ Id	4.5V @ 3.08mA
Drain to Source Voltage (Vdss)	600 V
Series	CoolMOS™
Power Dissipation (Max)	694W (Tc)
Package / Case	22-PowerBSOP Module
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	12V
Package	Tape & Reel (TR)
Base Product Number	IPDQ60R