Infineon Technologies
Producto No:
IPG20N06S415ATMA2
Fabricante:
Paquete:
PG-TDSON-8-4
Lote:
-
Ficha de datos:
-
Descripción:
MOSFET 2N-CH 8TDSON
Cantidad:
Entrega:

Pago:
Mínimo: 1 Múltiplos: 1
Qty
Precio unitario
Precio Ext
1
$1.2635
$1.2635
10
$1.12765
$11.2765
100
$0.879225
$87.9225
500
$0.726294
$363.147
1000
$0.573401
$573.401
2000
$0.535173
$1070.346
¿No es el precio que quieres? Envíe RFQ ahora y nos pondremos en contacto con usted lo antes posible.

| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| Configuration | 2 N-Channel (Dual) |
| Input Capacitance (Ciss) (Max) @ Vds | 2260pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 29nC @ 10V |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 15.5mOhm @ 17A, 10V |
| Supplier Device Package | PG-TDSON-8-4 |
| Vgs(th) (Max) @ Id | 4V @ 20µA |
| Drain to Source Voltage (Vdss) | 60V |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| Package / Case | 8-PowerVDFN |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 50W |
| Mfr | Infineon Technologies |
| Current - Continuous Drain (Id) @ 25°C | 20A |
| Package | Tape & Reel (TR) |
| Base Product Number | IPG20N |