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IPG20N06S415ATMA2

Infineon Technologies

Producto No:

IPG20N06S415ATMA2

Paquete:

PG-TDSON-8-4

Lote:

-

Ficha de datos:

-

Descripción:

MOSFET 2N-CH 8TDSON

Cantidad:

Entrega:

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Pago:

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En stock : 5000

Mínimo: 1 Múltiplos: 1

Qty

Precio unitario

Precio Ext

  • 1

    $1.2635

    $1.2635

  • 10

    $1.12765

    $11.2765

  • 100

    $0.879225

    $87.9225

  • 500

    $0.726294

    $363.147

  • 1000

    $0.573401

    $573.401

  • 2000

    $0.535173

    $1070.346

¿No es el precio que quieres? Envíe RFQ ahora y nos pondremos en contacto con usted lo antes posible.

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Información del producto

Parámetro Info

Guía del usuario

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Configuration 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds 2260pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 15.5mOhm @ 17A, 10V
Supplier Device Package PG-TDSON-8-4
Vgs(th) (Max) @ Id 4V @ 20µA
Drain to Source Voltage (Vdss) 60V
Series Automotive, AEC-Q101, OptiMOS™
Package / Case 8-PowerVDFN
Technology MOSFET (Metal Oxide)
Power - Max 50W
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 20A
Package Tape & Reel (TR)
Base Product Number IPG20N