IPI65R380C6XKSA1

Infineon Technologies

Producto No:

IPI65R380C6XKSA1

Fabricante:

Paquete:

PG-TO262-3

Lote:

Ficha de datos:

Descripción:

MOSFET N-CH 650V 10.6A TO262-3

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Entrega:

Pago:

En stock : 500

Mínimo: 1 Múltiplos: 1

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	710 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	39 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	380mOhm @ 3.2A, 10V
Supplier Device Package	PG-TO262-3
Vgs(th) (Max) @ Id	3.5V @ 320µA
Drain to Source Voltage (Vdss)	650 V
Series	CoolMOS™
Power Dissipation (Max)	83W (Tc)
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	10.6A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IPI65R380