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IPP65R420CFDXKSA2

Infineon Technologies

Producto No:

IPP65R420CFDXKSA2

Paquete:

PG-TO220-3

Lote:

-

Ficha de datos:

-

Descripción:

MOSFET N-CH 650V 8.7A TO220-3

Cantidad:

Entrega:

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Pago:

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En stock : 500

Mínimo: 1 Múltiplos: 1

Qty

Precio unitario

Precio Ext

  • 1

    $2.2515

    $2.2515

  • 10

    $1.86865

    $18.6865

  • 100

    $1.48732

    $148.732

  • 500

    $1.258465

    $629.2325

  • 1000

    $1.06779

    $1067.79

  • 2000

    $1.0144

    $2028.8

  • 5000

    $0.976268

    $4881.34

  • 10000

    $0.943948

    $9439.48

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Información del producto

Parámetro Info

Guía del usuario

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 870 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs 31.5 nC @ 10 V
Mounting Type Through Hole
Product Status Active
Rds On (Max) @ Id, Vgs 420mOhm @ 3.4A, 10V
Supplier Device Package PG-TO220-3
Vgs(th) (Max) @ Id 4.5V @ 300µA
Drain to Source Voltage (Vdss) 650 V
Series CoolMOS™ CFD2
Power Dissipation (Max) 83.3W (Tc)
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 8.7A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IPP65R420