IPS60R600PFD7SAKMA1

Infineon Technologies

Producto No:

IPS60R600PFD7SAKMA1

Fabricante:

Paquete:

PG-TO251-3

Lote:

Ficha de datos:

Descripción:

MOSFET N-CH 650V 6A TO251-3

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En stock : 21

Mínimo: 1 Múltiplos: 1

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Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	344 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs	8.5 nC @ 10 V
Mounting Type	Through Hole
Product Status	Not For New Designs
Rds On (Max) @ Id, Vgs	600mOhm @ 1.7A, 10V
Supplier Device Package	PG-TO251-3
Vgs(th) (Max) @ Id	4.5V @ 80µA
Drain to Source Voltage (Vdss)	650 V
Series	CoolMOS™PFD7
Power Dissipation (Max)	31W (Tc)
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IPS60R600