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IPS70R600P7SAKMA1

Infineon Technologies

Producto No:

IPS70R600P7SAKMA1

Paquete:

PG-TO251-3

Lote:

-

Ficha de datos:

-

Descripción:

MOSFET N-CH 700V 8.5A TO251-3

Cantidad:

Entrega:

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Pago:

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En stock : 281

Mínimo: 1 Múltiplos: 1

Qty

Precio unitario

Precio Ext

  • 1

    $0.8645

    $0.8645

  • 10

    $0.70775

    $7.0775

  • 100

    $0.550525

    $55.0525

  • 500

    $0.466602

    $233.301

  • 1000

    $0.380095

    $380.095

  • 2000

    $0.357818

    $715.636

  • 5000

    $0.340774

    $1703.87

  • 10000

    $0.325052

    $3250.52

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Información del producto

Parámetro Info

Guía del usuario

Operating Temperature -40°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 364 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs 10.5 nC @ 10 V
Mounting Type Through Hole
Product Status Active
Rds On (Max) @ Id, Vgs 600mOhm @ 1.8A, 10V
Supplier Device Package PG-TO251-3
Vgs(th) (Max) @ Id 3.5V @ 90µA
Drain to Source Voltage (Vdss) 700 V
Series CoolMOS™ P7
Power Dissipation (Max) 43W (Tc)
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 8.5A (Tc)
Vgs (Max) ±16V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IPS70R600