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IPSA70R1K2P7SAKMA1

Infineon Technologies

Producto No:

IPSA70R1K2P7SAKMA1

Paquete:

PG-TO251-3

Lote:

-

Ficha de datos:

-

Descripción:

MOSFET N-CH 700V 4.5A TO251-3

Cantidad:

Entrega:

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Pago:

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En stock : 6

Mínimo: 1 Múltiplos: 1

Qty

Precio unitario

Precio Ext

  • 1

    $0.722

    $0.722

  • 10

    $0.62605

    $6.2605

  • 100

    $0.433675

    $43.3675

  • 500

    $0.362387

    $181.1935

  • 1000

    $0.308418

    $308.418

  • 2000

    $0.274692

    $549.384

  • 5000

    $0.260234

    $1301.17

  • 10000

    $0.240958

    $2409.58

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Información del producto

Parámetro Info

Guía del usuario

Operating Temperature -40°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 174 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs 4.8 nC @ 400 V
Mounting Type Through Hole
Product Status Not For New Designs
Rds On (Max) @ Id, Vgs 1.2Ohm @ 900mA, 10V
Supplier Device Package PG-TO251-3
Vgs(th) (Max) @ Id 3.5V @ 40µA
Drain to Source Voltage (Vdss) 700 V
Series CoolMOS™ P7
Power Dissipation (Max) 25W (Tc)
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 4.5A (Tc)
Vgs (Max) ±16V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IPSA70