IPU50R950CE

Infineon Technologies

Producto No:

IPU50R950CE

Fabricante:

Paquete:

PG-TO251-3

Lote:

Ficha de datos:

Descripción:

N-CHANNEL POWER MOSFET

Cantidad:

Entrega:

Pago:

En stock : 235740

Mínimo: 1 Múltiplos: 1

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	231 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	10.5 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	950mOhm @ 1.2A, 13V
Supplier Device Package	PG-TO251-3
Vgs(th) (Max) @ Id	3.5V @ 100µA
Drain to Source Voltage (Vdss)	500 V
Series	CoolMOS™
Power Dissipation (Max)	53W (Tc)
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	6.6A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	13V
Package	Bulk