IPW60R099C6FKSA1

Infineon Technologies

Producto No:

IPW60R099C6FKSA1

Fabricante:

Paquete:

PG-TO247-3-1

Lote:

Ficha de datos:

Descripción:

MOSFET N-CH 600V 37.9A TO247-3

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En stock : 218

Mínimo: 1 Múltiplos: 1

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2660 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	119 nC @ 10 V
Mounting Type	Through Hole
Product Status	Not For New Designs
Rds On (Max) @ Id, Vgs	99mOhm @ 18.1A, 10V
Supplier Device Package	PG-TO247-3-1
Vgs(th) (Max) @ Id	3.5V @ 1.21mA
Drain to Source Voltage (Vdss)	600 V
Series	CoolMOS™
Power Dissipation (Max)	278W (Tc)
Package / Case	TO-247-3
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	37.9A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IPW60R099