IRFD210

Harris Corporation

Producto No:

IRFD210

Fabricante:

Paquete:

4-DIP, Hexdip, HVMDIP

Lote:

Ficha de datos:

Descripción:

0.6A 200V 1.500 OHM N-CHANNEL

Cantidad:

Entrega:

Pago:

En stock : 1014

Mínimo: 1 Múltiplos: 1

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	140 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	8.2 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	1.5Ohm @ 360mA, 10V
Supplier Device Package	4-DIP, Hexdip, HVMDIP
Vgs(th) (Max) @ Id	4V @ 250µA
Drain to Source Voltage (Vdss)	200 V
Series	-
Power Dissipation (Max)	1W (Ta)
Package / Case	4-DIP (0.300", 7.62mm)
Technology	MOSFET (Metal Oxide)
Mfr	Harris Corporation
Current - Continuous Drain (Id) @ 25°C	600mA (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk
Base Product Number	IRFD210