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IRLHS6342TRPBF

Infineon Technologies

Producto No:

IRLHS6342TRPBF

Paquete:

6-PQFN (2x2)

Lote:

-

Ficha de datos:

-

Descripción:

MOSFET N-CH 30V 8.7A/19A 6PQFN

Cantidad:

Entrega:

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Pago:

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En stock : 130928

Mínimo: 1 Múltiplos: 1

Qty

Precio unitario

Precio Ext

  • 1

    $0.5605

    $0.5605

  • 10

    $0.494

    $4.94

  • 100

    $0.378955

    $37.8955

  • 500

    $0.299554

    $149.777

  • 1000

    $0.239647

    $239.647

  • 2000

    $0.21718

    $434.36

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Información del producto

Parámetro Info

Guía del usuario

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1019 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 4.5 V
Mounting Type Surface Mount
Product Status Not For New Designs
Rds On (Max) @ Id, Vgs 15.5mOhm @ 8.5A, 4.5V
Supplier Device Package 6-PQFN (2x2)
Vgs(th) (Max) @ Id 1.1V @ 10µA
Drain to Source Voltage (Vdss) 30 V
Series HEXFET®
Power Dissipation (Max) 2.1W (Ta)
Package / Case 6-PowerVDFN
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 8.7A (Ta), 19A (Tc)
Vgs (Max) ±12V
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Package Tape & Reel (TR)
Base Product Number IRLHS6342