IRLI640GPBF

Vishay Siliconix

Producto No:

IRLI640GPBF

Fabricante:

Paquete:

TO-220-3

Lote:

Ficha de datos:

Descripción:

MOSFET N-CH 200V 9.9A TO220-3

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En stock : 4733

Mínimo: 1 Múltiplos: 1

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	66 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	180mOhm @ 5.9A, 5V
Supplier Device Package	TO-220-3
Vgs(th) (Max) @ Id	2V @ 250µA
Drain to Source Voltage (Vdss)	200 V
Series	-
Power Dissipation (Max)	40W (Tc)
Package / Case	TO-220-3 Full Pack, Isolated Tab
Technology	MOSFET (Metal Oxide)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	9.9A (Tc)
Vgs (Max)	±10V
Drive Voltage (Max Rds On, Min Rds On)	4V, 5V
Package	Tube
Base Product Number	IRLI640