IXTH2R4N120P

IXYS

Producto No:

IXTH2R4N120P

Fabricante:

Paquete:

TO-247 (IXTH)

Lote:

Ficha de datos:

Descripción:

MOSFET N-CH 1200V 2.4A TO247

Cantidad:

Entrega:

Pago:

En stock : Por favor investigación

Por favor envíe RFQ, responderemos inmediatamente.

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1207 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	37 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	7.5Ohm @ 500mA, 10V
Supplier Device Package	TO-247 (IXTH)
Vgs(th) (Max) @ Id	4.5V @ 250µA
Drain to Source Voltage (Vdss)	1200 V
Series	Polar
Power Dissipation (Max)	125W (Tc)
Package / Case	TO-247-3
Technology	MOSFET (Metal Oxide)
Mfr	IXYS
Current - Continuous Drain (Id) @ 25°C	2.4A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IXTH2