RGT8NS65DGC9

Rohm Semiconductor

Producto No:

RGT8NS65DGC9

Fabricante:

Paquete:

TO-262

Lote:

Ficha de datos:

Descripción:

IGBT TRENCH FIELD 650V 8A TO262

Cantidad:

Entrega:

Pago:

En stock : 965

Mínimo: 1 Múltiplos: 1

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Operating Temperature	-40°C ~ 175°C (TJ)
Test Condition	400V, 4A, 50Ohm, 15V
Input Type	Standard
Reverse Recovery Time (trr)	40 ns
Switching Energy	-
Current - Collector (Ic) (Max)	8 A
Mounting Type	Through Hole
Product Status	Active
Voltage - Collector Emitter Breakdown (Max)	650 V
Td (on/off) @ 25°C	17ns/69ns
Supplier Device Package	TO-262
Current - Collector Pulsed (Icm)	12 A
Series	-
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 4A
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Gate Charge	13.5 nC
Power - Max	65 W
Mfr	Rohm Semiconductor
Package	Tube
IGBT Type	Trench Field Stop
Base Product Number	RGT8NS65