RJK6002DPH-E0#T2

Renesas Electronics America Inc

Producto No:

RJK6002DPH-E0#T2

Fabricante:

Paquete:

TO-251

Lote:

Ficha de datos:

Descripción:

MOSFET N-CH 600V 2A TO251

Cantidad:

Entrega:

Pago:

En stock : Por favor investigación

Por favor envíe RFQ, responderemos inmediatamente.

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	165 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	6.2 nC @ 10 V
Mounting Type	Through Hole
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	6.8Ohm @ 1A, 10V
Supplier Device Package	TO-251
Vgs(th) (Max) @ Id	-
Drain to Source Voltage (Vdss)	600 V
Series	-
Power Dissipation (Max)	30W (Tc)
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Technology	MOSFET (Metal Oxide)
Mfr	Renesas Electronics America Inc
Current - Continuous Drain (Id) @ 25°C	2A (Ta)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)