RX3R10BBHC16

Rohm Semiconductor

Producto No:

RX3R10BBHC16

Fabricante:

Paquete:

TO-220AB

Lote:

Ficha de datos:

Descripción:

NCH 150V 105A, TO-220AB, POWER M

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En stock : 992

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	7550 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs	130 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	8.8mOhm @ 50A, 10V
Supplier Device Package	TO-220AB
Vgs(th) (Max) @ Id	4V @ 1mA
Drain to Source Voltage (Vdss)	150 V
Series	-
Power Dissipation (Max)	181W (Tc)
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Mfr	Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C	105A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tube
Base Product Number	RX3R10