SCT040H65G3AG

STMicroelectronics

Producto No:

SCT040H65G3AG

Fabricante:

Paquete:

H2PAK-7

Lote:

Ficha de datos:

Descripción:

AUTOMOTIVE-GRADE SILICON CARBIDE

Cantidad:

Entrega:

Pago:

En stock : Por favor investigación

Por favor envíe RFQ, responderemos inmediatamente.

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	920 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs	39.5 nC @ 18 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	55mOhm @ 20A, 18V
Supplier Device Package	H2PAK-7
Vgs(th) (Max) @ Id	4.2V @ 1mA
Drain to Source Voltage (Vdss)	650 V
Series	Automotive, AEC-Q101
Power Dissipation (Max)	221W (Tc)
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Technology	SiCFET (Silicon Carbide)
Mfr	STMicroelectronics
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Vgs (Max)	+18V, -5V
Drive Voltage (Max Rds On, Min Rds On)	15V, 18V
Package	Tape & Reel (TR)
Base Product Number	SCT040