SISS46DN-T1-GE3

Vishay Siliconix

Producto No:

SISS46DN-T1-GE3

Fabricante:

Paquete:

PowerPAK® 1212-8S

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Descripción:

MOSFET N-CH 100V 12.5/45.3A PPAK

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En stock : 570

Mínimo: 1 Múltiplos: 1

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2140 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	42 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	12.8mOhm @ 10A, 10V
Supplier Device Package	PowerPAK® 1212-8S
Vgs(th) (Max) @ Id	3.4V @ 250µA
Drain to Source Voltage (Vdss)	100 V
Series	TrenchFET® Gen IV
Power Dissipation (Max)	5W (Ta), 65.7W (Tc)
Package / Case	PowerPAK® 1212-8S
Technology	MOSFET (Metal Oxide)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	12.5A (Ta), 45.3A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	SISS46