SIZ998BDT-T1-GE3

Vishay Siliconix

Producto No:

SIZ998BDT-T1-GE3

Fabricante:

Paquete:

8-PowerPair® (6x5)

Lote:

Ficha de datos:

Descripción:

DUAL N-CHANNEL 30-V (D-S) MOSFET

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En stock : 17917

Mínimo: 1 Múltiplos: 1

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Configuration	2 N-Channel (Dual), Schottky
Input Capacitance (Ciss) (Max) @ Vds	790pF @ 15V, 2130pF @ 15V
Gate Charge (Qg) (Max) @ Vgs	18nC @ 10V, 46.7nC @ 10V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	4.39mOhm @ 15A, 10V, 2.4mOhm @ 19A, 10V
Supplier Device Package	8-PowerPair® (6x5)
Vgs(th) (Max) @ Id	2.2V @ 250µA
Drain to Source Voltage (Vdss)	30V
Series	TrenchFET® Gen IV
Package / Case	8-PowerWDFN
Technology	MOSFET (Metal Oxide)
Power - Max	3.8W (Ta), 20W (Tc), 4.8W (Ta), 32.9W (Tc)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	23.7A (Ta), 54.8A (Tc), 36.2A (Ta), 94.6A (Tc)
Package	Tape & Reel (TR)
Base Product Number	SIZ998