SPP20N60S5XKSA1

Infineon Technologies

Producto No:

SPP20N60S5XKSA1

Fabricante:

Paquete:

PG-TO220-3-1

Lote:

Ficha de datos:

Descripción:

HIGH POWER_LEGACY

Cantidad:

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Pago:

En stock : 3589

Mínimo: 1 Múltiplos: 1

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	103 nC @ 10 V
Mounting Type	Through Hole
Product Status	Not For New Designs
Rds On (Max) @ Id, Vgs	190mOhm @ 13A, 10V
Supplier Device Package	PG-TO220-3-1
Vgs(th) (Max) @ Id	5.5V @ 1mA
Drain to Source Voltage (Vdss)	600 V
Series	CoolMOS™
Power Dissipation (Max)	208W (Tc)
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	SPP20N60