SPP20N65C3XKSA1

Infineon Technologies

Producto No:

SPP20N65C3XKSA1

Fabricante:

Paquete:

PG-TO220-3

Lote:

Ficha de datos:

Descripción:

MOSFET N-CH 650V 20.7A TO220-3

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En stock : 462

Mínimo: 1 Múltiplos: 1

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	114 nC @ 10 V
Mounting Type	Through Hole
Product Status	Not For New Designs
Rds On (Max) @ Id, Vgs	190mOhm @ 13.1A, 10V
Supplier Device Package	PG-TO220-3
Vgs(th) (Max) @ Id	3.9V @ 1mA
Drain to Source Voltage (Vdss)	650 V
Series	CoolMOS™
Power Dissipation (Max)	208W (Tc)
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	20.7A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	SPP20N65