TK11S10N1L,LQ

Toshiba Semiconductor and Storage

Producto No:

TK11S10N1L,LQ

Fabricante:

Paquete:

DPAK+

Lote:

Ficha de datos:

Descripción:

MOSFET N-CH 100V 11A DPAK

Cantidad:

Entrega:

Pago:

En stock : 1975

Mínimo: 1 Múltiplos: 1

Qty

Precio unitario

Precio Ext

¿No es el precio que quieres? Envíe RFQ ahora y nos pondremos en contacto con usted lo antes posible.

Operating Temperature	175°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	850 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	28mOhm @ 5.5A, 10V
Supplier Device Package	DPAK+
Vgs(th) (Max) @ Id	2.5V @ 100µA
Drain to Source Voltage (Vdss)	100 V
Series	U-MOSVIII-H
Power Dissipation (Max)	65W (Tc)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	11A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	TK11S10