TK12A80W,S4X

Toshiba Semiconductor and Storage

Producto No:

TK12A80W,S4X

Fabricante:

Paquete:

TO-220SIS

Lote:

Ficha de datos:

Descripción:

MOSFET N-CH 800V 11.5A TO220SIS

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En stock : 40

Mínimo: 1 Múltiplos: 1

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Operating Temperature	150°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1400 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs	23 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	450mOhm @ 5.8A, 10V
Supplier Device Package	TO-220SIS
Vgs(th) (Max) @ Id	4V @ 570µA
Drain to Source Voltage (Vdss)	800 V
Series	DTMOSIV
Power Dissipation (Max)	45W (Tc)
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	11.5A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	TK12A80