TK13E25D,S1X(S

Toshiba Semiconductor and Storage

Producto No:

TK13E25D,S1X(S

Fabricante:

Paquete:

TO-220-3

Lote:

Ficha de datos:

Descripción:

MOSFET N-CH 250V 13A TO220-3

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Pago:

En stock : 48

Mínimo: 1 Múltiplos: 1

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1100 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	250mOhm @ 6.5A, 10V
Supplier Device Package	TO-220-3
Vgs(th) (Max) @ Id	3.5V @ 1mA
Drain to Source Voltage (Vdss)	250 V
Series	-
Power Dissipation (Max)	102W (Tc)
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	13A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	TK13E25