TK160F10N1,LXGQ

Toshiba Semiconductor and Storage

Producto No:

TK160F10N1,LXGQ

Fabricante:

Paquete:

TO-220SM(W)

Lote:

Ficha de datos:

Descripción:

MOSFET N-CH 100V 160A TO220SM

Cantidad:

Entrega:

Pago:

En stock : 4500

Mínimo: 1 Múltiplos: 1

Qty

Precio unitario

Precio Ext

¿No es el precio que quieres? Envíe RFQ ahora y nos pondremos en contacto con usted lo antes posible.

Operating Temperature	175°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	8510 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	121 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Not For New Designs
Rds On (Max) @ Id, Vgs	2.4mOhm @ 80A, 10V
Supplier Device Package	TO-220SM(W)
Vgs(th) (Max) @ Id	4V @ 1mA
Drain to Source Voltage (Vdss)	100 V
Series	U-MOSVIII-H
Power Dissipation (Max)	375W (Tc)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	160A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	TK160F10