TK1R4S04PB,LXHQ

Toshiba Semiconductor and Storage

Producto No:

TK1R4S04PB,LXHQ

Fabricante:

Paquete:

DPAK+

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Descripción:

MOSFET N-CH 40V 120A DPAK

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En stock : 3048

Mínimo: 1 Múltiplos: 1

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Operating Temperature	175°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	5500 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	103 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	1.9mOhm @ 60A, 6V
Supplier Device Package	DPAK+
Vgs(th) (Max) @ Id	3V @ 500µA
Drain to Source Voltage (Vdss)	40 V
Series	U-MOSIX-H
Power Dissipation (Max)	180W (Tc)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	120A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tape & Reel (TR)
Base Product Number	TK1R4S04