TK2R9E10PL,S1X

Toshiba Semiconductor and Storage

Producto No:

TK2R9E10PL,S1X

Fabricante:

Paquete:

TO-220

Lote:

Ficha de datos:

Descripción:

PB-F POWER MOSFET TRANSISTOR TO-

Cantidad:

Entrega:

Pago:

En stock : 19

Mínimo: 1 Múltiplos: 1

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Operating Temperature	175°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	9500 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	161 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	2.9mOhm @ 50A, 10V
Supplier Device Package	TO-220
Vgs(th) (Max) @ Id	2.5V @ 1mA
Drain to Source Voltage (Vdss)	100 V
Series	U-MOSIX-H
Power Dissipation (Max)	306W (Tc)
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	100A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tube