TK31E60W,S1VX

Toshiba Semiconductor and Storage

Producto No:

TK31E60W,S1VX

Fabricante:

Paquete:

TO-220

Lote:

Ficha de datos:

Descripción:

MOSFET N-CH 600V 30.8A TO220

Cantidad:

Entrega:

Pago:

En stock : 50

Mínimo: 1 Múltiplos: 1

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3000 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs	86 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	88mOhm @ 15.4A, 10V
Supplier Device Package	TO-220
Vgs(th) (Max) @ Id	3.7V @ 1.5mA
Drain to Source Voltage (Vdss)	600 V
Series	DTMOSIV
Power Dissipation (Max)	230W (Tc)
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	30.8A (Ta)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	TK31E60