TK32E12N1,S1X

Toshiba Semiconductor and Storage

Producto No:

TK32E12N1,S1X

Fabricante:

Paquete:

TO-220

Lote:

Ficha de datos:

Descripción:

MOSFET N CH 120V 60A TO-220

Cantidad:

Entrega:

Pago:

En stock : 155

Mínimo: 1 Múltiplos: 1

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2000 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs	34 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	13.8mOhm @ 16A, 10V
Supplier Device Package	TO-220
Vgs(th) (Max) @ Id	4V @ 500µA
Drain to Source Voltage (Vdss)	120 V
Series	U-MOSVIII-H
Power Dissipation (Max)	98W (Tc)
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	TK32E12