TK39J60W,S1VQ

Toshiba Semiconductor and Storage

Producto No:

TK39J60W,S1VQ

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Paquete:

TO-3P(N)

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Descripción:

MOSFET N-CH 600V 38.8A TO3P

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En stock : 25

Mínimo: 1 Múltiplos: 1

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4100 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs	110 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	65mOhm @ 19.4A, 10V
Supplier Device Package	TO-3P(N)
Vgs(th) (Max) @ Id	3.7V @ 1.9mA
Drain to Source Voltage (Vdss)	600 V
Series	DTMOSIV
Power Dissipation (Max)	270W (Tc)
Package / Case	TO-3P-3, SC-65-3
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	38.8A (Ta)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	TK39J60