TK3A90E,S4X

Toshiba Semiconductor and Storage

Producto No:

TK3A90E,S4X

Fabricante:

Paquete:

TO-220SIS

Lote:

Ficha de datos:

Descripción:

PB-F POWER MOSFET TRANSISTOR TO-

Cantidad:

Entrega:

Pago:

En stock : 47

Mínimo: 1 Múltiplos: 1

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Operating Temperature	150°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	4.6Ohm @ 1.3A, 10V
Supplier Device Package	TO-220SIS
Vgs(th) (Max) @ Id	4V @ 250µA
Drain to Source Voltage (Vdss)	900 V
Series	-
Power Dissipation (Max)	35W (Tc)
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	2.5A (Ta)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube