TK40E10N1,S1X

Toshiba Semiconductor and Storage

Producto No:

TK40E10N1,S1X

Fabricante:

Paquete:

TO-220

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Ficha de datos:

Descripción:

MOSFET N CH 100V 90A TO220

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En stock : 40

Mínimo: 1 Múltiplos: 1

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	49 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	8.2mOhm @ 20A, 10V
Supplier Device Package	TO-220
Vgs(th) (Max) @ Id	4V @ 500µA
Drain to Source Voltage (Vdss)	100 V
Series	U-MOSVIII-H
Power Dissipation (Max)	126W (Tc)
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	90A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	TK40E10