TK49N65W,S1F

Toshiba Semiconductor and Storage

Producto No:

TK49N65W,S1F

Fabricante:

Paquete:

TO-247

Lote:

Ficha de datos:

Descripción:

PB-F POWER MOSFET TRANSISTOR TO2

Cantidad:

Entrega:

Pago:

En stock : 30

Mínimo: 1 Múltiplos: 1

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Operating Temperature	150°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	6500 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs	160 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	55mOhm @ 24.6A, 10V
Supplier Device Package	TO-247
Vgs(th) (Max) @ Id	3.5V @ 2.5mA
Drain to Source Voltage (Vdss)	650 V
Series	-
Power Dissipation (Max)	400W (Tc)
Package / Case	TO-247-3
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	49.2A (Ta)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	TK49N65