TK58A06N1,S4X

Toshiba Semiconductor and Storage

Producto No:

TK58A06N1,S4X

Fabricante:

Paquete:

TO-220SIS

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Descripción:

MOSFET N-CH 60V 58A TO220SIS

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En stock : 4

Mínimo: 1 Múltiplos: 1

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3400 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs	46 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	5.4mOhm @ 29A, 10V
Supplier Device Package	TO-220SIS
Vgs(th) (Max) @ Id	4V @ 500µA
Drain to Source Voltage (Vdss)	60 V
Series	U-MOSVIII-H
Power Dissipation (Max)	35W (Tc)
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	58A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	TK58A06