TK5R3E08QM,S1X

Toshiba Semiconductor and Storage

Producto No:

TK5R3E08QM,S1X

Fabricante:

Paquete:

TO-220

Lote:

Ficha de datos:

Descripción:

UMOS10 TO-220AB 80V 5.3MOHM

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En stock : 1

Mínimo: 1 Múltiplos: 1

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Operating Temperature	175°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3980 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs	55 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	5.3mOhm @ 50A, 10V
Supplier Device Package	TO-220
Vgs(th) (Max) @ Id	3.5V @ 700µA
Drain to Source Voltage (Vdss)	80 V
Series	U-MOSX-H
Power Dissipation (Max)	150W (Tc)
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tube